Electronic device

ABSTRACT

The present invention provides an electronic device that is able to achieve an improvement in yield or an electronic device that is able to prevent a sealing resin from exfoliating from a sub-electrode. The electronic device is provided with an electronic element and a wire bonded to the electronic element. The electronic element includes a bonding pad to which the wire is bonded. The bonding pad includes a Pd layer that directly contacts the wire.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an electronic device.

2. Description of Related Art

Heretofore, semiconductor devices are known (see JP-A-2002-76051, forexample). The semiconductor device disclosed in this document isprovided with a semiconductor element, bonding pads, wires, and a leadframe. The bonding pads are formed on the semiconductor element. Thewires are bonded to the bonding pads and the lead frame.

SUMMARY OF THE INVENTION

The present invention has been proposed under the above circumstances,and a main object thereof is to provide an electronic device that isable to achieve an improvement in yield or an electronic device that isable to prevent sealing resin from exfoliating from a sub-electrode.

According to a first aspect of the present invention, an electronicdevice is provided that has an electronic element and a wire bonded tothe electronic element, the electronic element including a firstconductive layer, a second conductive layer and a third conductivelayer, the first conductive layer having a bonding pad to which the wireis bonded, the second conductive layer having a buffer part and aninterconnect portion that are disposed in the same plane as each other,the third conductive layer having a first interconnect region insulatedfrom the bonding pad, and the buffer part being located between thebonding pad and the first interconnect region in a thickness directionof the bonding pad.

Preferably, the electronic device is further provided with an insulatinglayer, and the insulating layer has a region that is interposed betweenthe first conductive layer and the second conductive layer.

Preferably, the insulating layer is made of SiO₂.

Preferably, the wire includes a bonding portion bonded to the electronicelement, and the buffer part has a region overlapping with the bondingportion as seen in the thickness direction.

Preferably, the bonding pad has a joining area joined to the bondingportion, and a periphery of the buffer part has a shape surrounding thejoining area as seen in the thickness direction.

Preferably, the buffer part overlaps with an entirety of the joiningarea as seen in the thickness direction.

Preferably, the buffer part has a rectangular shape.

Preferably, the buffer part has a buffer part front surface and a bufferpart back surface that face opposite sides to each other, and the bufferpart front surface faces a side on which the bonding pad is located.

Preferably, the buffer part front surface and the buffer part backsurface are both entirely covered by the insulating layer.

Preferably, the buffer part is a floating electrode.

Preferably, the insulating layer fills an entire area sandwiched betweenthe buffer part and the bonding pad.

Preferably, the buffer part is covered by the insulating layer around anentire periphery thereof.

Preferably, the electronic element includes a support via extending inthe thickness direction, the support via is interposed between thebonding pad and the buffer part, and the bonding pad and the buffer partare electrically connected to each other.

Preferably, a crack is formed in the bonding pad, and the crack iscovered by the wire.

Preferably, the bonding pad has a pad front surface and the a pad backsurface that face opposite sides to each other, and the wire is bondedto the pad front surface.

Preferably, the bonding pad includes an extended part extending from thepad front surface, and the extended part extends from the pad frontsurface along the bonding portion.

Preferably, the first conductive layer includes an interconnect metal,and the interconnect metal is connected to the bonding pad and overlapswith the interconnect portion as seen in the thickness direction.

Preferably, the interconnect metal has a region that overlaps with theinterconnect portion as seen in the thickness direction, and iselectrically connected to the interconnect portion.

Preferably, the electronic element includes a first via extending in thethickness direction, and the first via is interposed between theinterconnect metal and the interconnect portion, and electricallyconnects the interconnect metal and the interconnect portion to eachother.

Preferably, the first via overlaps with the interconnect metal and theinterconnect portion as seen in the thickness direction.

Preferably, the insulating layer fills the entire area sandwichedbetween the third conductive layer and the buffer part.

Preferably, the third conductive layer has a second interconnect regiondisposed in the same plane as the first interconnect region, and thesecond interconnect region is electrically connected to the interconnectportion.

Preferably, the electronic element includes a second via extending inthe thickness direction, and the second via is interposed between thesecond interconnect region and the interconnect portion, andelectrically connects the second interconnect region and theinterconnect portion to each other.

Preferably, the second via overlaps with the second interconnect regionand the interconnect portion as seen in the thickness direction.

Preferably, the electronic element includes a fourth conductive layer,the third conductive layer is located between the second conductivelayer and the fourth conductive layer in the thickness direction, andthe fourth conductive layer has a region that overlaps with the bufferpart as seen in the thickness direction.

Preferably, the fourth conductive layer has a first interconnect filmand a second interconnect film, the first interconnect film overlapswith the buffer part as seen in the thickness direction, and the secondinterconnect film is electrically connected to the second interconnectregion.

Preferably, the electronic element includes a third via extending in thethickness direction, and the third via is interposed between the firstinterconnect film and the first interconnect region, and electricallyconnects the first interconnect film and the first interconnect regionto each other.

Preferably, the third via overlaps with the first interconnect film andthe first interconnect region as seen in the thickness direction.

Preferably, the electronic element includes a fourth via extending inthe thickness direction, and the fourth via is interposed between thesecond interconnect film and the second interconnect region, andelectrically connects the second interconnect film and the secondinterconnect region to each other.

Preferably, the fourth via overlaps with the second interconnect filmand the second interconnect region as seen in the thickness direction.

Preferably, the electronic element includes a semiconductor substratehaving a semiconductor element, and the bonding pad overlaps with thesemiconductor substrate as seen in the thickness direction.

Preferably, the semiconductor substrate is made of Si.

Preferably, the electronic element is further provided with a connectingpart formed on the semiconductor substrate, and the bonding pad iselectrically connected to the semiconductor element via the connectingpart.

Preferably, the connecting part is interposed between the semiconductorsubstrate and the second interconnect film, and contacts thesemiconductor substrate and the second interconnect film.

Preferably, taking the bonding pad as a first bonding pad, the firstconductive layer includes a second bonding pad disposed in a differentposition from the first bonding pad as seen in the thickness direction,and the first interconnect region is electrically connected to thesecond bonding pad.

Preferably, the first conductive layer and the second conductive layerare made of at least one of Al and Cu.

Preferably, the first conductive layer has a greater maximum thicknessthan the second conductive layer.

Preferably, the first conductive layer has a maximum thickness of 1.0 to3.0 μm, the second conductive layer has a maximum thickness of 0.1 to0.5 μm, and the first conductive layer is separated from the secondconductive layer by a distance of 0.1 to 0.5 μm.

Preferably, the first via is made of W.

Preferably, the wire is made of Cu, Au or Ag.

Preferably, the electronic element includes an insulating protectivelayer covering the first conductive layer, and the protective layerexposes the bonding pad.

Preferably, an opening is formed in the protective layer, and thebonding pad is exposed through the opening.

Preferably, the buffer part has a region that is located inside theopening and a region that is located outside the opening, as seen in thethickness direction.

Preferably, the inner edge of the opening is entirely surrounded by aperipheral edge of the buffer part as seen in the thickness direction.

Preferably, the protective layer has a passivation film, and thepassivation film is made of at least one of SiN and SiO₂.

Preferably, the passivation film has a SiN layer and a SiO₂ layer thatare laminated one on the other.

Preferably, the protective layer has a polyimide layer covering thepassivation film.

Preferably, the electronic device is further provided with asub-electrode to which the wire is bonded.

Preferably, the electronic device is further provided with a sealingresin that seals the electronic element and the wire.

According to a second aspect of the present invention, an electronicdevice is provided that has an electronic element and a wire bonded tothe electronic element, the electronic element including a bonding padto which the wire is bonded, the wire including a bonding portion towhich the electronic element is bonded, an outer surface of the bondingportion having a bottom surface, a lateral surface and a pressedsurface, the bottom surface contacting the bonding pad, the lateralsurface having a first curved surface part, the first curved surfacepart having a curved shape that, starting from a boundary between thebottom surface and the lateral surface, curves toward the pressedsurface side as the first curved surface part extends outward as seen inthe thickness direction, the pressed surface having a ring-shaped bentpart and being located further inward than the lateral surface as seenin a thickness direction of the bonding pad, and the boundary beinglocated further outward than the bent part as seen in the thicknessdirection.

Preferably, the bottom surface has a circular shape and faces in thethickness direction toward the bonding pad from the bonding portion.

Preferably, the lateral surface connects the pressed surface and thebottom surface.

Preferably, the lateral surface has an annular shape.

Preferably, a cross-section of the lateral surface in a plane orthogonalto the thickness direction has a circular shape whose diameter isdefined as a ball diameter.

Preferably, the wire includes a bridging part, the bridging part isconnected to the bonding portion, extends linearly, and has a circularshape in cross-section, the ball diameter is from 44 μm or more to 50 μmor less in the case where the bridging part has a diameter of less than22.5 μm, the ball diameter is 59 μm or more in the case where thebridging part has a diameter from 22.5 μm or more to less than 27.5 μm,the ball diameter is 63 μm or more in the case where the bridging parthas a diameter from 27.5 μm or more to less than 32.5 μm, and the balldiameter is 77 μm or more in the case where the bridging part has adiameter of 32.5 μm or more.

Preferably, the first curved surface part at least partially contactsthe bonding pad.

Preferably, the lateral surface has a second curved surface part, andthe second curved surface part has a curved shape that, starting from aboundary between the pressed surface and the lateral surface, curvestoward the bottom surface side as the second curved surface part extendsoutward as seen in the thickness direction.

Preferably, the pressed surface has a first portion and a second portionthat are each annular, the first portion is connected to the lateralsurface, and the second portion is connected to the first portion viathe bent part.

Preferably, the first portion and the second portion are both flat.

Preferably, the second portion slopes relative to the first portion, andforms an angle of 180 degrees or less with the first portion.

Preferably, the first portion is located between the lateral surface andthe bent part as seen in the thickness direction, and the second portionis located further inward than the bent part as seen in the thicknessdirection.

Preferably, the second portion entirely overlaps with the bottom surfaceas seen in the thickness direction.

Preferably, the second portion slopes relative to the thicknessdirection, so as to extend outward as seen in the thickness direction asthe second portion approaches the bottom surface in the thicknessdirection.

Preferably, an outer surface of the bonding portion has a peripheralsurface, and the peripheral surface is connected to the pressed surfaceand stands up from the pressed surface.

Preferably, the peripheral surface has a circular shape incross-section.

Preferably, the peripheral surface extends in the thickness direction.

Preferably, the peripheral surface is located further inward than thepressed surface as seen in the thickness direction.

Preferably, the electronic element includes a semiconductor substratehaving a semiconductor element, and the bonding pad overlaps with thesemiconductor substrate as seen in the thickness direction.

Preferably, the semiconductor substrate is made of Si.

Preferably, the bonding pad has a pad front surface and a pad backsurface that face opposite sides to each other, and the wire is bondedto the pad front surface.

Preferably, the bonding pad includes an extended part that extends outfrom the pad front surface, and the extended part extends out from thepad front surface along the bonding portion.

Preferably, the extended part contacts the lateral surface.

Preferably, the wire is made of Cu, Au or Ag.

Preferably, the electronic element includes an insulating protectivelayer, and the protective layer exposes the bonding pad.

Preferably, an opening is formed in the protective layer, and thebonding pad is exposed through the opening.

Preferably, the protective layer has a passivation film, and thepassivation film is made of at least one of SiN and SiO₂.

Preferably, the passivation film has a SiN layer and a SiO₂ layer thatare laminated one on the other.

Preferably, the protective layer has a polyimide layer covering thepassivation film.

Preferably, the electronic device is further provided with asub-electrode to which the wire is bonded.

Preferably, the wire includes a bonding region bonded to thesub-electrode, and a bridging part that is connected to the bondingportion and the bonding region.

Preferably, the bonding region is bonded after the bonding portion.

Preferably, the electronic device is further provided with a sealingresin that seals the electronic element and the wire.

Preferably, the sealing resin partially covers the lateral surface.

According to a third aspect of the present invention, a method formanufacturing an electronic device is provided that has a step ofpreparing a lead frame that includes a sub-electrode having an Ag layer,a step of holding the lead frame in an environment having a humidity of40 to 50%, and a step of bonding the wire to the Ag layer, after theholding step.

Preferably, the holding step is performed for 1 to 168 hours.

Preferably, the environment in the holding step is an atmosphericpressure environment under an air or nitrogen atmosphere at 20 to 30° C.

Preferably, the lead frame includes a main electrode, and the method isfurther provided with a step of disposing an electronic element on themain electrode, before the holding step.

Preferably, the method is further provided with a step of bonding thewire to the electronic device, before the step of bonding the wire tothe Ag layer.

Preferably, the method is further provided with a step of forming asealing resin that covers the wire and the lead frame, after the step ofbonding the wire to the Ag layer.

Preferably, the method is further provided with a step of holding thelead frame in an environment having a humidity of 40 to 50%, between thestep of bonding the wire to the Ag layer and the step of forming thesealing resin that covers the wire and the lead frame.

Preferably, the method is further provided with a step of forming piecesby cutting the sealing resin and the lead frame, after the step offorming the sealing resin.

Preferably, the Ag layer has a thickness of 5 to 15 μm.

Preferably, the sub-electrode includes a Cu part on which the Ag layeris formed, and the Cu part is thicker than the Ag layer.

According to a fourth aspect of the present invention, an electronicdevice is provided that has an electronic element, a sub-electrode and awire bonded to the electronic element and the sub-electrode, thesub-electrode including an Ag layer, the wire being bonded to the Aglayer, and the Ag layer being held at an environment having a humidityof 40 to 50%, before a step of bonding the wire to the Ag layer.

Preferably, the Ag layer has a thickness of 5 to 15 μm.

Preferably, the sub-electrode includes a Cu part on which the Ag layeris formed, and the Cu part is thicker than the Ag layer.

Preferably, the electronic device is further provided with a sealingresin that seals the electronic element and the wire.

Preferably, the Ag layer is covered by the sealing resin.

Preferably, the electronic element includes a semiconductor substratehaving a semiconductor element.

Preferably, the semiconductor substrate is made of Si.

Preferably, the wire is made of Cu, Au or Ag.

Preferably, the electronic element includes an insulating protectivelayer, and the protective layer exposes the bonding pad.

Preferably, an opening is formed in the protective layer, and thebonding pad is exposed through the opening.

Preferably, the protective layer has a passivation film, and thepassivation film is made of at least one of SiN and SiO₂.

Preferably, the passivation film has a SiN layer and a SiO₂ layer thatare laminated one on the other.

According to a fifth aspect of the present invention, an electronicdevice is provided that has an electronic element and a wire bonded tothe electronic element, the electronic element including a bonding padto which the wire is bonded, a main component of the bonding pad beingAl, a mixed metal being mixed in the wire, and the mixed metal being oneof Pt, Pd and Au.

Preferably, a main component of the wire is Cu or Ag.

Preferably, a main component of the wire is Cu.

Preferably, a concentration of the mixed metal in the wire is 0.5 to 5wt %.

Preferably, the bonding pad includes a metal thin film layer, and themetal thin film layer is made of CuAl₂.

Preferably, the metal thin film layer contacts the wire.

Preferably, the metal thin film layer has a thickness of 5 to 20 nm.

Preferably, the wire includes a bonding portion bonded to the electronicelement, an outer surface of the bonding portion has a bottom surface, alateral surface, and a pressed surface, the bottom surface contacts thebonding pad, the lateral surface connects the pressed surface and thebottom surface, the pressed surface has a ring-shaped bent part and islocated further inward than the lateral surface as seen in a thicknessdirection of the bonding pad, the lateral surface has a first curvedsurface part, and the first curved surface part has a curved shape that,starting from a boundary between the bottom surface and the lateralsurface, curves toward the pressed surface side as the first curvedsurface part extends outward as seen in the thickness direction.

Preferably, the bottom surface has a circular shape and faces in thethickness direction toward the bonding pad from the bonding portion.

Preferably, the lateral surface has an annular shape.

Preferably, the first curved surface part at least partially contactsthe bonding pad.

Preferably, the lateral surface has a second curved surface part, andthe second curved surface part has a curved shape that, starting from aboundary between the pressed surface and the lateral surface, curvestoward the bottom surface side as the second curved surface part extendsoutward as seen in the thickness direction.

Preferably, the pressed surface has a first portion and a second portionthat each has an annular shape, the first portion is connected to thelateral surface, and the second portion is connected to the firstportion via the bent part.

Preferably, the first portion and the second portion are both flat.

Preferably, the second portion slopes relative to the first portion, andforms an angle of 180 degrees or less with the first portion.

Preferably, the first portion is located between the lateral surface andthe bent part as seen in the thickness direction, and the second portionis located further inward than the bent part as seen in the thicknessdirection.

Preferably, the second portion entirely overlaps with the bottom surfaceas seen in the thickness direction.

Preferably, the second portion slopes relative to the thicknessdirection, so as to extend inwardly as seen in the thickness directionas the second portion is distanced further from the bottom surface inthe thickness direction.

Preferably, an outer surface of the bonding portion has a peripheralsurface, and the peripheral surface is connected to the pressed surfaceand stands up from the pressed surface.

Preferably, the peripheral surface has a circular shape incross-section.

Preferably, the peripheral surface extends in the thickness direction.

Preferably, the peripheral surface is located further inward than thepressed surface as seen in the thickness direction.

Preferably, the electronic element includes a semiconductor substratehaving a semiconductor element, and the bonding pad overlaps with thesemiconductor substrate as seen in a thickness direction of the bondingpad.

Preferably, the semiconductor substrate is made of Si.

Preferably, the bonding pad has a pad front surface and a pad backsurface that face opposite sides to each other, and the wire is bondedto the pad front surface.

Preferably, the bonding pad includes an extended part that extends outfrom the pad front surface, and the extended part extends out from thepad front surface along the bonding portion.

Preferably, the extended part contacts the lateral surface.

Preferably, the electronic element includes an insulating protectivelayer, and the protective layer exposes the bonding pad.

Preferably, an opening is formed in the protective layer, and thebonding pad is exposed through the opening.

Preferably, the protective layer has a passivation film, and thepassivation film is made of at least one of SiN and SiO₂.

Preferably, the passivation film has a SiN layer and a SiO₂ layer thatare laminated one on the other.

Preferably, the protective layer has a polyimide layer covering thepassivation film.

Preferably, the electronic device is further provided with asub-electrode to which the wire is bonded.

Preferably, the wire includes a bonding region bonded to thesub-electrode, and a bridging part that is connected to the bondingportion and the bonding region.

Preferably, the bonding region is bonded after the bonding portion.

Preferably, the electronic device is further provided with a sealingresin that seals the electronic element and the wire.

Preferably, the sealing resin partially covers the lateral surface.

According to a sixth aspect of the present invention, an electronicdevice is provided that has an electronic element and a wire bonded tothe electronic element, the electronic element including a bonding padto which the wire is bonded, the wire including a bonding portion bondedto the electronic element, an outer surface of the bonding portionhaving a bottom surface, a lateral surface, a pressed surface and aperipheral surface, the bottom surface contacting the bonding pad, thepressed surface being located further inward than the lateral surface asseen in a thickness direction of the bonding pad, the peripheral surfacebeing connected to the pressed surface, standing up from the pressedsurface and having a circular shape in cross-section, the wire includinga bridging part, the bridging part being connected to the bondingportion, extending linearly, and having a circular shape incross-section, and a difference in diameter between the bridging partand the peripheral surface being 2 to 8 μm.

Preferably, a difference in diameter between the bridging part and theperipheral surface is 4 to 8 μm.

Preferably, the pressed surface has a ring-shaped bent part, and thebent part has a diameter of 46 to 54 μm in the case where the bridgingpart has a diameter from 27.5 μm or more to less than 32.5 μm.

Preferably, the bottom surface has a circular shape and faces in thethickness direction toward the bonding pad from the bonding portion.

Preferably, the lateral surface connects the pressed surface and thebottom surface.

Preferably, the lateral surface has an annular shape.

Preferably, a cross-section of the lateral surface in a plane orthogonalto the thickness direction has a circular shape.

Preferably, the pressed surface has a first portion and a second portionthat each has an annular shape, the first portion is connected to thelateral surface, and the second portion is connected to the firstportion via the bent part.

Preferably, the first portion and the second portion are both flat.

Preferably, the second portion slopes relative to the first portion, andforms an angle of 180 degrees or less with the first portion.

Preferably, the first portion is located between the lateral surface andthe bent part as seen in the thickness direction, and the second portionis located further inward than the bent part as seen in the thicknessdirection.

Preferably, the second portion entirely overlaps with the bottom surfaceas seen in the thickness direction.

Preferably, the second portion slopes relative to the thicknessdirection so as to extend inwardly as seen in the thickness direction asthe second portion is distanced further from the bottom surface in thethickness direction.

Preferably, the peripheral surface extends in the thickness direction.

Preferably, the peripheral surface is located further inward than thepressed surface as seen in the thickness direction.

Preferably, the electronic element includes a semiconductor substratehaving a semiconductor element, and the bonding pad overlaps with thesemiconductor substrate as seen in the thickness direction.

Preferably, the semiconductor substrate is made of Si.

Preferably, the bonding pad has a pad front surface and a pad backsurface that face opposite sides to each other, and the wire is bondedto the pad front surface.

Preferably, the bonding pad includes an extended part that extends outfrom the pad front surface, and the extended part extends out from thepad front surface along the bonding portion.

Preferably, the extended part contacts the lateral surface.

Preferably, the wire is made of Cu, Au or Ag.

Preferably, the electronic element includes an insulating protectivelayer, and the protective layer exposes the bonding pad.

Preferably, an opening is formed in the protective layer, and thebonding pad is exposed through the opening.

Preferably, the protective layer has a passivation film, and thepassivation film is made of at least one of SiN and SiO₂.

Preferably, the passivation film has a SiN layer and a SiO₂ layer thatare laminated one on the other.

Preferably, the protective layer has a polyimide layer covering thepassivation film.

Preferably, the electronic device is further provided with asub-electrode to which the wire is bonded.

Preferably, the wire includes a bonding region bonded to thesub-electrode, and a bridging part that is connected to the bondingportion and the bonding region.

Preferably, the bonding region is bonded after the bonding portion.

Preferably, the electronic device is further provided with a sealingresin that seals the electronic element and the wire.

Preferably, the sealing resin partially covers the lateral surface.

According to a seventh aspect of the present invention, an electronicdevice is provided that has an electronic element and a wire bonded tothe electronic element, the electronic element including a bonding padto which the wire is bonded, the bonding pad including Pd layer, and thePd layer directly contacting the wire.

Preferably, the wire directly contacts a surface of the Pd layer.

Preferably, the surface of the Pd layer has a maximum height differenceof 40 nm or less.

Preferably, the surface of the Pd layer has a maximum height differenceof 30 nm or less.

Preferably, the surface of the Pd layer has a maximum height differenceof 20 nm or less.

Preferably, the surface of the Pd layer has a maximum height differenceof 10 nm or less.

Preferably, the Pd layer has a thickness of 0.1 to 1 μm.

Preferably, the bonding pad is further provided with a Ni layer, the Pdlayer is located between the wire and the Ni layer, and the surface ofthe Ni layer contacts the Pd layer and has a maximum height differenceof 40 nm or less.

Preferably, the Ni layer has a thickness of 1 to 5 μm.

Preferably, the bonding pad is further provided with a Cu layer, the Nilayer is located between the Pd layer and the Cu layer, and the surfaceof the Cu layer contacts the Ni layer and has a maximum heightdifference of 40 nm or less.

Preferably, the Cu layer has a thickness of 2 to 12 μm.

Preferably, the electronic device is further provided with a sealingresin that seals the electronic element and the wire.

Preferably, the electronic element includes a semiconductor substratehaving a semiconductor element.

Preferably, the semiconductor substrate is made of Si.

Preferably, the wire is made of Cu, Au or Ag.

Preferably, the electronic element includes an insulating protectivelayer, and the protective layer exposes the bonding pad.

Preferably, an opening is formed in the protective layer, and thebonding pad is exposed through the opening.

Preferably, the protective layer has a passivation film, and thepassivation film is made of at least one of SiN and SiO₂.

Preferably, the passivation film has a SiN layer and a SiO₂ layer thatare laminated one on the other.

Further features and advantages of the present invention will becomeapparent from the detailed description given below with reference to theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of an electronic device according to afirst embodiment of the present invention.

FIG. 2 is a plan view of the electronic device shown in FIG. 1 (sealingresin indicated with imaginary line).

FIG. 3 is a partially enlarged view in which a portion of FIG. 1 isenlarged.

FIG. 4 is a partially enlarged view in which a portion of FIG. 3 isenlarged.

FIG. 5 is a cross-sectional view along a line V-V in FIG. 3.

FIG. 6 is a cross-sectional view along a line VI-VI in FIG. 3.

FIG. 7 is a diagram in which a wire has been omitted from FIG. 6(joining area shown with hatching).

FIG. 8 shows a state where a bonding pad is cracked.

FIG. 9 is a partially enlarged view in which a portion of FIG. 3 isenlarged.

FIG. 10 is a partially enlarged view in which a portion of FIG. 1 isenlarged.

FIG. 11 is a partial cross-sectional view showing a step of a method formanufacturing the electronic device shown in FIG. 1.

FIG. 12 shows a step following FIG. 11.

FIG. 13 is a diagram looking at a capillary of FIG. 12 from below.

FIG. 14 shows a step following FIG. 12.

FIG. 15 shows a step following FIG. 14.

FIG. 16 shows a step following FIG. 15.

FIG. 17 shows a step following FIG. 16.

FIG. 18 shows a step following FIG. 17.

FIG. 19 shows a step following FIG. 18.

FIG. 20 is a table showing test results of whether a wire isappropriately bonded to a bonding pad.

FIG. 21 is a partially enlarged cross-sectional view of an electronicdevice according to a first modification of the first embodiment of thepresent invention.

FIG. 22 is a cross-sectional view of an electronic device according to asecond embodiment of the present invention.

FIG. 23 is a cross-sectional view of an electronic device according to athird embodiment of the present invention.

FIG. 24 is a partially enlarged view in which a portion of FIG. 23 isenlarged.

FIG. 25 is a cross-sectional view of an electronic device according to afourth embodiment of the present invention.

FIG. 26 is a partially enlarged view in which a portion of FIG. 25 isenlarged.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, embodiments of the present invention will be described indetail with reference to the drawings.

First Embodiment

A first embodiment of the present invention will be described usingFIGS. 1 to 20.

FIG. 1 is a cross-sectional view of an electronic device according tothe first embodiment of the present invention.

An electronic device A10 shown in FIG. 1 is provided with an electronicelement 1, wires 3, a main electrode 51, sub-electrodes 52, and asealing resin 7.

FIG. 2 is a plan view of the electronic device shown in FIG. 1 (sealingresin indicated with imaginary line). FIG. 3 is a partially enlargedview in which a portion of FIG. 1 is enlarged 1. FIG. 4 is a partiallyenlarged view in which a portion of FIG. 3 is enlarged. FIG. 5 is across-sectional view along a line V-V in FIG. 3. FIG. 6 is across-sectional view along a line VI-VI in FIG. 3.

The electronic element 1 is an element that achieves a desired function.In the present embodiment, the electronic element 1 consists of asemiconductor. As shown in FIG. 4, the electronic element 1 includes asemiconductor substrate 11, a first conductive layer 13, a secondconductive layer 14, a third conductive layer 15, a fourth conductivelayer 16, first vias 171, second vias 172, third vias 173, fourth vias174, connecting parts 177, an insulating layer 18, and a protectivelayer 19.

The semiconductor substrate 11 shown in FIG. 4 and the like is made of asemiconductor material. In the present embodiment, the semiconductorsubstrate 11 is made of Si. The semiconductor substrate 11 has asemiconductor element. Examples of such a semiconductor element includea diode, a transistor, and a capacitor.

The first conductive layer 13 shown in FIG. 4 and the like is made of aconductive material. The first conductive layer 13 is made of at leastone of Al and Cu, for example. In the present embodiment, the firstconductive layer 13 is made of Al. The first conductive layer 13 hasdifferent thicknesses. The first conductive layer 13 has a maximumthickness (excluding an extended part 131E discussed later) of 1.0 to3.0 μm, for example.

The first conductive layer 13 has bonding pads 131 and an interconnectmetal 133. The bonding pads 131 and the interconnect metal 133 aredisposed in the same plane as each other.

As shown in FIG. 2, in the present embodiment, the bonding pads 131 havea rectangular shape. The wires 3 are bonded to the bonding pads 131. Thebonding pads 131 overlap with the semiconductor substrate 11 as seen ina thickness direction Z of the bonding pad 131.

As shown in FIG. 7, the bonding pads 131 have a joining area 131R joinedto the wire 3. The bonding pads 131 have a pad front surface 131A and apad back surface 131B that face opposite sides to each other. The wire 3is bonded to the pad front surface 131A. The pad front surface 131Aconstitutes the joining area 131R. The bonding pads 131 include anextended part 131E that extends out from the pad front surface 131A. Theextended part 131E extends out from the pad front surface 131A along abonding portion 31. The extended part 131E is formed as a result of aportion of the bonding pad 131 being pushed up by the wire 3, when thewire 3 is bonded to the bonding pad 131.

A crack 139 may be formed in the bonding pads 131 as shown in FIG. 8.The crack 139 is covered by the wire 3. The crack 139 often forms anarc-like shape. Note that the crack 139 need not be formed in thebonding pads 131.

The interconnect metal 133 shown in FIG. 4 is connected to the bondingpads 131. In the present embodiment, the interconnect metal 133 has along rectangular shape, and has regions disposed at both ends of thebonding pads 131.

Assuming that the abovementioned bonding pads 131 are first bonding pads131 a (see FIG. 2), the first conductive layer 13 has second bondingpads 131β (see FIG. 2). The second bonding pads 131β are disposed indifferent positions from the first bonding pads 131 a as seen in thethickness direction Z. The second bonding pads 131β are insulated fromthe first bonding pads 131 a.

The second conductive layer 14 shown in FIG. 4 and the like is locatedbetween the first conductive layer 13 and the third conductive layer 15in the thickness direction Z. The second conductive layer 14 is made ofa conductive material. The second conductive layer 14 is made of atleast one of Al and Cu, for example. In the present embodiment, thesecond conductive layer 14 is made of Al. The first conductive layer 13has a greater maximum thickness (excluding the extended part 131E) thanthe second conductive layer 14. The second conductive layer 14 has amaximum thickness of 0.1 to 0.5 μm, for example. The first conductivelayer 13 is separated from the second conductive layer 14 by a distanceof 0.1 to 0.5 μm, for example.

The second conductive layer 14 shown in FIG. 4 has a buffer part 141 andan interconnect portion 143 that are disposed in the same plane as eachother.

The buffer part 141 shown in FIGS. 4 to 6 and the like has a region thatoverlaps with the bonding portion 31 as seen in the thickness directionZ. A peripheral edge 141C of the buffer part 141 has a shape thatsurrounds the joining area 131R as seen in the thickness direction Z.The buffer part 141 overlaps with an entirety of the joining area 131Ras seen in the thickness direction Z. In the present embodiment, thebuffer part 141 has a rectangular shape. The buffer part 141 is afloating electrode. That is, the buffer part 141 is insulated from allconductors apart from the buffer part 141.

The buffer part 141 has a buffer part front surface 141A and a bufferpart back surface 141B that face opposite sides to each other. Thebuffer part front surface 141A faces a side on which the bonding pad 131is located.

The interconnect metal 133 overlaps with the interconnect portion 143shown in FIG. 4 as seen in the thickness direction Z. The interconnectmetal 133 has a region that overlaps with the interconnect portion 143as seen in the thickness direction Z. The interconnect metal 133 iselectrically connected to the interconnect portion 143.

The third conductive layer 15 shown in FIG. 4 is located between thesecond conductive layer 14 and the fourth conductive layer 16 in thethickness direction Z. The third conductive layer 15 is made of aconductive material. The third conductive layer 15 is made of at leastone of Al and Cu, for example. In the present embodiment, the thirdconductive layer 15 is made of Al. The third conductive layer 15 has amaximum thickness of 0.1 to 0.5 μm, for example. The third conductivelayer 15 is separated from the second conductive layer 14 by a distanceof 0.1 to 0.5 μm, for example.

The third conductive layer 15 has a first interconnect region 151 and asecond interconnect region 153 that are disposed in the same plane aseach other.

The first interconnect region 151 is separated from the buffer part 141.The first interconnect region 151 opposes the buffer part back surface141B. The first interconnect region 151 is insulated from the bondingpads 131. The buffer part 141 is located between the first interconnectregion 151 and the bonding pads 131 in the thickness direction Z. Thefirst interconnect region 151 is electrically connected to theabovementioned second bonding pads 131β.

The second interconnect region 153 is disposed in the same plane as thefirst interconnect region 151. The second interconnect region 153 iselectrically connected to the interconnect portion 143. The secondinterconnect region 153 has a region that overlaps with the interconnectportion 143 as seen in the thickness direction Z.

The fourth conductive layer 16 shown in FIG. 4 is made of a conductivematerial. The fourth conductive layer 16 is made of at least one of Aland Cu, for example. In the present embodiment, the fourth conductivelayer 16 is made of Al. The fourth conductive layer 16 has a maximumthickness of 0.1 to 0.5 μm, for example. The third conductive layer 15is separated from the fourth conductive layer 16 by a distance of 0.1 to0.5 μm, for example. The fourth conductive layer 16 has a region thatoverlaps with the buffer part 141 as seen in the thickness direction Z.

The fourth conductive layer 16 has a first interconnect film 161, asecond interconnect film 163, and a third interconnect film 165. Thefirst interconnect film 161, the second interconnect film 163 and thethird interconnect film 165 are disposed in the same plane as eachother.

The first interconnect film 161 overlaps with the buffer part 141 asseen in the thickness direction Z. The first interconnect film 161 iselectrically connected to the first interconnect region 151. The secondinterconnect film 163 overlaps with the second interconnect region 153as seen in the thickness direction Z. The third interconnect film 165overlaps with the buffer part 141 as seen in the thickness direction Z.

The first vias 171 shown in FIG. 4 extend in the thickness direction Z.The first vias 171 are interposed between the interconnect metal 133 andthe interconnect portion 143. The first vias 171 overlap with theinterconnect metal 133 and the interconnect portion 143 as seen in thethickness direction Z. The first vias 171 electrically connect theinterconnect metal 133 and the interconnect portion 143 to each other.The first vias 171 are made of a conductive material, such as W(tungsten), for example.

The second vias 172 shown in FIG. 4 extend in the thickness direction Z.The second vias 172 are interposed between the second interconnectregion 153 and the interconnect portion 143. The second vias 172 overlapwith the second interconnect region 153 and the interconnect portion 143as seen in the thickness direction Z. The second vias 172 electricallyconnect the second interconnect region 153 and the interconnect portion143 to each other. The second vias 172 are made of a conductivematerial, such as W (tungsten), for example.

The third vias 173 shown in FIG. 4 extend in the thickness direction Z.The third vias 173 are interposed between the first interconnect film161 and the first interconnect region 151. The third vias 173 overlapwith the first interconnect film 161 and the first interconnect region151 as seen in the thickness direction Z. The third vias 173electrically connect the first interconnect film 161 and the firstinterconnect region 151 to each other. The third vias 173 are made of aconductive material, such as W (tungsten), for example.

The fourth vias 174 shown in FIG. 4 extend in the thickness direction Z.The fourth vias 174 are interposed between the second interconnect film163 and the second interconnect region 153. The fourth vias 174 overlapwith the second interconnect film 163 and the second interconnect region153 as seen in the thickness direction Z. The fourth vias 174electrically connect the second interconnect film 163 and the secondinterconnect region 153 to each other. The fourth vias 174 are made of aconductive material, such as W (tungsten), for example.

The connecting parts 177 shown in FIG. 4 are formed on the semiconductorsubstrate 11. The bonding pads 131 are electrically connected to thesemiconductor element via the connecting parts 177. The connecting parts177 are interposed between the semiconductor substrate 11 and the secondinterconnect film 163, and contact the semiconductor substrate 11 andthe second interconnect film 163. The connecting parts 177 electricallyconnect the semiconductor element of the semiconductor substrate 11 tothe second interconnect film 163.

The insulating layer 18 shown in FIG. 4 is formed between the firstconductive layer 13 and the semiconductor substrate 11. The insulatinglayer 18 has a region that is interposed between the first conductivelayer 13 and the second conductive layer 14, a region that is interposedbetween the second conductive layer 14 and the third conductive layer15, a region that is interposed between the third conductive layer 15and the fourth conductive layer 16, and a region that is interposedbetween the fourth conductive layer 16 and the semiconductor substrate11. In particular, the insulating layer 18 fills the entire areasandwiched between the buffer part 141 and the bonding pads 131. Theinsulating layer 18 fills the entire area sandwiched between the thirdconductive layer 15 and the buffer part 141. The insulating layer 18covers the buffer part 141 around the entire periphery of the bufferpart 141. The insulating layer 18 entirely covers both the buffer partfront surface 141A and the buffer part back surface 141B. The insulatinglayer 18 is made of SiO₂, for example.

The protective layer 19 shown in FIG. 4 has insulating properties, andcovers the first conductive layer 13. The protective layer 19 exposesthe bonding pads 131. An opening 19A is formed in the protective layer19. The bonding pads 131 are exposed through the opening 19A. The bufferpart 141 has a region that is located inside the opening 19A and aregion that is located outside the opening 19A as seen in the thicknessdirection Z. In the present embodiment, an inner edge 19Aa of theopening 19A is entirely surrounded by the peripheral edge 141C of thebuffer part 141 as seen in the thickness direction Z.

The protective layer 19 has a passivation film 191 and a polyimide layer193.

The passivation film 191 is made of at least one of SiN and SiO₂. In thepresent embodiment, the passivation film 191 has a SiN layer 191A and aSiO₂ layer 191B that are laminated one on the other. The polyimide layer193 covers the passivation film 191. The passivation film 191 isinterposed between the polyimide layer 193 and the first conductivelayer 13.

The wires 3 are bonded to the electronic element 1. The wires 3 arebonded to the sub-electrodes 52. The wires 3 are made of Cu, Au or Ag,for example. In the present embodiment, the wires 3 are made of Cu.

As shown in FIG. 1, the wires 3 include the bonding portion 31, abonding region 33, and a bridging part 35.

The bonding portions 31 are bonded to the electronic element 1.Specifically, the bonding portions are electrically connected to thefirst conductive layer 13 (bonding pads 131) of the electronic element1. When manufacturing the electronic device A10, the bonding portions 31are bonded before the bonding regions 33. That is, the bonding portions31 are first bonding parts.

As shown in FIG. 9, an outer surface of the bonding portions 31 has abottom surface 311, a lateral surface 312, a pressed surface 314, and aperipheral surface 316.

The bottom surface 311 contacts the bonding pad 131. The bottom surface311 has a circular shape and faces in the thickness direction Z towardthe bonding pad 131 from the bonding portion 31.

The lateral surface 312 connects the pressed surface 314 and the bottomsurface 311. The lateral surface 312 has an annular shape. Across-section of the lateral surface 312 in a plane orthogonal to thethickness direction Z has a circular shape whose diameter is defined asa ball diameter L1 (see FIG. 9).

The lateral surface 312 has a first curved surface part 312A and asecond curved surface part 312B.

The first curved surface part 312A has a curved shape that, startingfrom a boundary 313A between the bottom surface 311 and the lateralsurface 312, curves toward the pressed surface 314 side as the firstcurved surface part 312A extends outward as seen in the thicknessdirection Z. The first curved surface part 312A at least partiallycontacts the bonding pad 131. The first curved surface part 312Apartially contacts the sealing resin 7.

The second curved surface part 312B has a curved shape that, startingfrom a boundary 313B between the pressed surface 314 and the lateralsurface 312, curves toward the bottom surface 311 side as the secondcurved surface part 312B extends outward as seen in the thicknessdirection Z. The second curved surface part 312B contacts the sealingresin 7.

The pressed surface 314 is located further inward than the lateralsurface 312 as seen in the thickness direction Z of the bonding pad 131.The pressed surface 314 is formed by being pressed by a pressing part 82of a capillary 8 which will be discussed later.

The pressed surface 314 has a first portion 314A, a second portion 314B,and a bent part 314C.

The first portion 314A has an annular shape. The first portion 314A isconnected to the lateral surface 312. The first portion 314A is flat.The first portion 314A is located between the lateral surface 312 andthe bent part 314C as seen in the thickness direction Z.

The second portion 314B has an annular shape. The second portion 314B isconnected to the first portion 314A via the bent part 314C. The secondportion 314B is flat. The second portion 314B slopes relative to thefirst portion 314A, and forms an angle of 180 degrees or less with thefirst portion 314A. The second portion 314B slopes relative to thethickness direction Z so as to extend outward as seen in the thicknessdirection Z as the second portion 314B approaches the bottom surface 311in the thickness direction Z. The second portion 314B is located furtherinward than the bent part 314C as seen in the thickness direction Z. Thesecond portion 314B entirely overlaps with the bottom surface 311 asseen in the thickness direction Z.

The bent part 314C has a ring shape, and is located between the firstportion 314A and the second portion 314B. The boundary 313A is locatedfurther outward than the bent part 314C as seen in the thicknessdirection Z.

The peripheral surface 316 is connected to the pressed surface 314, andstands up from the pressed surface 314. The peripheral surface 316 islocated further inward than the pressed surface 314 as seen in thethickness direction Z. The peripheral surface 316 stands up from thesecond portion 314B. The second portion 314B slopes relative to theperipheral surface 316. The peripheral surface 316 has a circular shapein cross-section. The peripheral surface 316 extends in the thicknessdirection Z.

The bonding regions 33 are bonded to the sub-electrodes 52. Whenmanufacturing the electronic device A10, the bonding regions 33 arebonded after the bonding portions 31. That is, the bonding regions 33are second bonding parts. The bonding regions 33 have a joining areawith the sub-electrodes 52 in one direction.

The bridging part 35 is connected to the bonding portion 31 and thebonding region 33. The bridging part 35 extends linearly, and has acircular shape in cross-section.

The sub-electrodes 52 shown in FIG. 10 and the like are made of aconductive material. The sub-electrodes 52 originate from a lead frame.The sub-electrodes 52 have a Cu part 521 and an Ag layer 522.

The Cu part 521 is made of Cu. The Ag layer 522 is formed on the Cu part521. The Cu part 521 is thicker than the Ag layer 522. The Ag layer 522is made of Ag. The wire 3 is bonded to the Ag layer 522. The Ag layer522 has a thickness of 5 to 15 μm, for example.

The main electrode 51 is made of a conductive material. The mainelectrode 51 originates from a lead frame. The main electrode 51 has aCu part and an Ag layer, similarly to the sub-electrodes 52, anddescription thereof will be omitted because of the similarly to thesub-electrodes 52. The electronic element 1 is disposed on the mainelectrode 51 via an adhesive layer.

The sealing resin 7 seals the electronic element 1 and the wires 3.Specifically, the sealing resin 7 covers the electronic element 1, thewires 3, the main electrode 51, and the sub-electrodes 52. The sealingresin 7 partially covers the lateral surface 312. The sealing resin 7 ismade of an epoxy resin, for example. An end face of the sub-electrodes52 is exposed from the sealing resin 7. This end face is the cut surfaceformed when the lead frame is cut.

Next, a method for manufacturing the electronic device A10 will bedescribed.

First, a lead frame 5 is prepared as shown in FIG. 11. The lead frame 5has regions that will form the main electrode 51 and the sub-electrodes52. Also, the lead frame 5 has a Cu part 521A and an Ag layer 522A.Because the Cu part 521A and the Ag layer 522A are respectively similarto the Cu part 521 and the Ag layer 522, description thereof will beomitted here. The lead frame 5 is sealed in a sealed housing body so asto not come in contact with the outside air.

Next, although not illustrated, the sealed housing body is opened andthe lead frame 5 is removed. Once the lead frame 5 has been removed, theelectronic element 1 is disposed on the main electrode 51. In disposingthe electronic element 1 on the main electrode 51, a joining materialsuch as silver paste or solder, for example, is used. Next, oxide andsulfide formed by a cure that is used when disposing the electronicelement 1 are eliminated.

Next, although not illustrated, the lead frame 5 is housed in acontainer. Inside the container, the lead frame 5 is held in anenvironment having a humidity of 40 to 50%, for example. The environmentis preferably an atmospheric pressure environment under an air ornitrogen atmosphere at 20 to 30° C. The step of holding the lead frame 5inside the container is carried out for 1 to 168 hours, for example.

Next, the lead frame 5 is removed from the container and the wires 3 arebonded to the electronic element 1 using the capillary 8 shown in FIGS.12 and 13 (first bonding step). The capillary 8 has a hole inner surface81 and the pressing part 82.

The hole inner surface 81 is the inner surface of a through hole thatextends in one direction. In the present embodiment, the hole innersurface 81 has a circular shape in cross-section. The pressing part 82is connected to the hole inner surface 81. The pressing part 82 is aregion for pressing the wires 3 against a joining target when bondingthe wires 3. In the present embodiment, the pressing part 82 has a firstpressing area 821 and a second pressing area 822. The first pressingarea 821 is connected to the second pressing area 822 and the hole innersurface 81, and slopes relative to the second pressing area 822 and thehole inner surface 81. The first pressing area 821 and the secondpressing area 822 both have an annular shape. The boundary between thefirst pressing area 821 and the second pressing area 822 has a circularshape.

In performing the first bonding step, the wire 3 is inserted into thethrough hole in the capillary 8 as shown in FIG. 12, and the wire 3 ispassed through to the outside of the through hole. Next, the tip of thewire 3 is melted by means such as directing sparks onto the tip of thewire 3. A ball 319 is thereby formed. Next, as shown in FIG. 14, thecapillary 8 is positioned above the electronic element 1 (specifically,above the bonding pad 131 of the first conductive layer 13). Next, theball 319 is adhered to the electronic element 1, as shown in FIG. 15.Vibrations produced by ultrasonic waves are applied to the ball 319,while pressing the ball 319 against the electronic element 1 using thecapillary 8 in this state. The ball 319 is thereby joined to theelectronic element 1. The capillary 8 is then separated from theelectronic element 1, as shown in FIG. 16.

The abovementioned bonding portion 31 is formed as a result of the ball319 being pressed by the capillary 8. The pressed surface 314 of thebonding portion 31 is formed as a result of being pressed by thepressing part 82 of the capillary 8. Specifically, the second portion314B of the pressed surface 314 is formed as a result of being pressedby the first pressing area 821 of the pressing part 82, and the firstportion 314A of the pressed surface 314 is formed as a result of beingpressed by the second pressing area 822 of the pressing part 82. Adiameter L3 of the boundary between the second pressing area 822 and thefirst pressing area 821 coincides with a diameter L3 of the bent part314C of the bonding portion 31.

Also, when the ball 319 is pressed by the capillary 8, the ball 319partially enters inside the through hole in the capillary 8. Thus, theperipheral surface 316 having a shape corresponding to the hole innersurface 81 is formed in the bonding portion 31. Therefore, the innerdiameter of the hole inner surface 81 coincides with a diameter L2 ofthe peripheral surface 316.

The ball diameter L1 of the bonding portion 31 can be adjusted byadjusting the strength with which the wire is pressed against theelectronic element 1 by the capillary 8 and the size of the ball 319.

In firmly joining the wire 3 to the electronic element 1, the followingrelationships preferably exist between the ball diameter L1 and adiameter L4 (coincides with a diameter L4 of the abovementioned bridgingpart 35) of the wire 3.

If the bridging part 35 has a diameter L4 of less than 22.5 μm, the balldiameter L1 is preferably from 44 μm or more to 50 μm or less, if thebridging part 35 has a diameter L4 from 22.5 μm or more to less than27.5 μm, the ball diameter L1 is preferably 59 μm or more, if thebridging part 35 has a diameter L4 from 27.5 μm or more to less than32.5 μm, the ball diameter L1 is preferably 63 μm or more, and if thebridging part 35 has a diameter L4 of 32.5 μm or more, the ball diameterL1 is preferably 77 μm or more. Note that if the bridging part 35 has adiameter L4 of 20 μm, the bent part 314C has a diameter L3 of 35 μm, forexample, if the bridging part 35 has a diameter L4 of 25 μm, the bentpart 314C has a diameter L3 of 48 μm, for example, if the bridging part35 has a diameter L4 of 30 μm, the bent part 314C has a diameter L3 of50 μm, for example, and if the bridging part 35 has a diameter L4 of 35μm, the bent part 314C has a diameter L3 of 64 μm, for example.

Next, although not illustrated, the capillary 8 is moved while lettingout the wire 3 to form a wire loop, and the wire 3 is pressed into thesub-electrode 52 (in the present embodiment, the Ag layer 522A).

Next, the second bonding step is performed. In the second bonding step,when the wire 3 has been pressed into the sub-electrode 52 (in thepresent embodiment, the Ag layer 522A), the wire 3 is fixed to thesub-electrode 52 (in the present embodiment, the Ag layer 522A) byapplying a load to the capillary 8 together with applying ultrasonicvibrations. The ultrasonic vibrations are applied in a similar manner tothe application of ultrasonic vibrations in the first bonding step. Whenthe wire 3 has been fixed to the sub-electrode 52 (in the presentembodiment, the Ag layer 522A), the capillary 8 is raised with the wire3 inserted into the capillary 8 in a clamped state, and the wire 3 iscut (not shown). The electronic element 1 and the sub-electrode 52 arethereby electrically coupled by the wire loop formed by the wire 3 (seeFIG. 17). A plurality of wires 3 are bonded in this way.

Next, when the bonding of the wires 3 has finished, the lead frame 5 towhich the electronic elements 1 and the wires 3 are bonded is housed ina container. Inside the container, the lead frame 5 is held in anenvironment having a humidity of 40 to 50%, for example. The environmentis preferably an atmospheric pressure environment under an air ornitrogen atmosphere at 20 to ° C. The step of holding the lead frame 5inside the container is carried out for 1 to 168 hours, for example.

Next, the lead frame 5 is removed from the container, and the sealingresin 7 that covers the wires 3 and the lead frame 5 is formed, as shownin FIG. 18, using a desired metal mold.

Next, after forming the sealing resin 7, pieces are formed by cuttingthe sealing resin 7 and the lead frame 5, as shown in FIG. 19. Aplurality of electronic devices A10 are thereby manufactured.

Next, the operation and effects of the present embodiment will bedescribed.

In the case where the crack 139 is formed in the bonding pads 131, theconductive material constituting the bonding pads 131 moves downward. Inthe present embodiment, the second conductive layer 14 has the bufferpart 141. The buffer part 141 is located between the bonding pads 131and the first interconnect region 151 in the thickness direction Z.According to such a configuration, even if the crack 139 is formed inthe bonding pads 131, the crack 139 is prevented from expanding by thebuffer part 141. Therefore, even if the crack 139 is formed in thebonding pads 131, the problem of an electrical connection beingestablished between the bonding pads 131 and the first interconnectregion 151 can be avoided. An improvement in the yield of the electronicdevice A10 can thereby be achieved.

In the first conductive layer 13, the crack 139 tends to form in theportion that overlaps with the bonding portion 31 as seen in thethickness direction Z. In the present embodiment, the wires 3 includethe bonding portion 31 bonded to the electronic element 1. The bufferpart 141 has a region that overlaps with the bonding portion 31 as seenin the thickness direction Z. According to such a configuration, even ifthe crack 139 forms in the bonding pads 131, the crack 139 is morereliably prevented from expanding by the buffer part 141. Therefore,even if the crack 139 forms in the bonding pads 131, the problem of anelectrical connection being established between the bonding pads 131 andthe first interconnect region 151 can be more suitably avoided. Furtherimprovement in the yield of the electronic device A10 can thereby beachieved.

In the present embodiment, the insulating layer 18 fills the entire areasandwiched between the buffer part 141 and the bonding pads 131.According to such a configuration, the crack 139 can be prevented fromexpanding to the buffer part 141, between the bonding pads 131 and thebuffer part 141.

In the present embodiment, the boundary 313A is located further outwardthan the bent part 314C as seen in the thickness direction Z. Accordingto such a configuration, the area of the bottom surface 311 of thebonding portion 31 can be enlarged. The impulse per unit area applied tothe bonding pad 131 from the wire 3 can thereby be reduced at the timethat the wire 3 is pressed by the capillary 8. The wires 3 can therebybe firmly bonded to the bonding pads 131, while preventing the crack 139from forming in the bonding pads 131.

Test results as to whether the wire 3 is appropriately bonded to thebonding pad 131 are shown in FIG. 20. After bonding the wire 3 to thebonding pad 131, a pull test that involves pulling the wire 3 from thebonding pad 131 was carried out. The tests were each carried out aplurality of times, and the number of times that the wire 3 detachedfrom the bonding pad 131 before the wire 3 broke between the bondingportion 31 and the bridging part 35 was investigated. For example, 2/12shows that the wire 3 detached from the bonding pads 131 two out of 12times.

As shown in FIG. 20, the wire 3 became detached from the bonding pad131, in the case where the wire 3 had a diameter L4 (coincides with thediameter L4 of the bridging part 35) of 20 μm and the ball diameter L1was 39 μm, 41 μm, 43 μm or 51 μm. On the other hand, the wire 3 did notbecome detached from the bonding pad 131, in the case where the wire 3had a diameter L4 (coincides with the diameter L4 of the bridging part35) of 20 μm and the ball diameter L1 was 45 μm or 47 μm. Therefore, inthe case where the bridging part 35 has a diameter L4 of less than 22.5μm, the ball diameter L1 is preferably from 44 μm or more to 50 μm orless.

As shown in FIG. 20, the wire 3 became detached from the bonding pad131, in the case where the wire 3 had a diameter L4 (coincides with thediameter L4 of the bridging part 35) of 25 μm and the ball diameter L1was 54 μm, 56 μm or 58 μm. On the other hand, the wire 3 did not becomedetached from the bonding pad 131, in the case where the wire 3 had adiameter L4 (coincides with the diameter L4 of the bridging part 35) of25 μm and the ball diameter L1 was 60 μm, 62 μm or 64 μm. Therefore, inthe case where the bridging part 35 has a diameter L4 from 22.5 μm ormore to less than 27.5 μm, the ball diameter L1 is preferably 59 μm ormore.

As shown in FIG. 20, the wire 3 became detached from the bonding pad131, in the case where the wire 3 had a diameter L4 (coincides with thediameter L4 of the bridging part 35) of 30 μm and the ball diameter L1was 58 μm or 62 μm. On the other hand, the wire 3 did not becomedetached from the bonding pad 131, in the case where the wire 3 had adiameter L4 (coincides with the diameter L4 of the bridging part 35) of30 μm and the ball diameter L1 was 64 μm or more. Therefore, in the casewhere the bridging part 35 has a diameter L4 from 27.5 μm or more toless than 32.5 μm, the ball diameter L1 is preferably 63 μm or more.

As shown in FIG. 20, the wire 3 became detached from the bonding pad131, in the case where the wire 3 had a diameter L4 (coincides with thediameter L4 of the bridging part 35) of 35 μm and the ball diameter L1was 72 μm, 74 μm or 76 μm. On the other hand, the wire 3 did not becomedetached from the bonding pad 131, in the case where the wire 3 had adiameter L4 (coincides with the diameter L4 of the bridging part 35) of35 μm and the ball diameter L1 was 78 μm, 80 μm or 82 μm. Therefore, inthe case where the bridging part 35 has a diameter L4 of 32.5 μm ormore, the ball diameter L1 is preferably 77 μm or more.

In the present embodiment, the lead frame 5 is held in an environmenthaving a humidity of 40 to 50%, and thereafter the wires 3 are bonded tothe Ag layer 522A. According to such a configuration, the Ag layer 522Aof the lead frame 5 can be prevented from sulfurizing before the wires 3are bonded to the lead frame 5. According to such a configuration, thewires 3 and the lead frame 5 (Ag layer 522A) can be more firmly joined.An improvement in the yield of the electronic device A10 can thereby beachieved.

In the present embodiment, the lead frame 5 is held in an environmenthaving a humidity of 40 to 50%, between the step of bonding the wires 3to the Ag layer 522A and the step of forming the sealing resin 7 thatcovers the wires 3 and the lead frame 5. According to such aconfiguration, the Ag layer 522A of the lead frame 5 can be preventedfrom sulfurizing before the sealing resin 7 is formed. According to sucha configuration, the sealing resin 7 can be prevented from exfoliatingfrom the sub-electrode 52.

Note that, unlike the abovementioned electronic device A10, theelectronic element 1 may include support vias 170 that extend in thethickness direction Z, as shown in FIG. 21. The support vias 170 areinterposed between the bonding pads 131 and the buffer part 141, andelectrically connect the bonding pads 131 and the buffer part 141 toeach other. According to such a configuration, the support vias 170supports the bonding pads 131, enabling the crack 139 in the bondingpads 131 to be prevented from occurring.

Second Embodiment

A second embodiment of the present invention will be described usingFIG. 22.

Note that, in the following description, the same reference signs aregiven to configuration that is the same as or similar to the above, anddescription will be appropriately omitted.

An electronic device A11 of the present embodiment differs from theabovementioned electronic device A10 in that the peripheral surface 316has a comparatively small diameter L2. In the present embodiment, thedifference between the diameter L4 (coincides with the diameter L4 ofthe bridging part 35) of the wire 3 and the diameter L2 of theperipheral surface 316 is 2 to 8 μm, for example. It becomes difficultto smoothly insert the wire 3 inside the through hole of the capillary 8when the difference between the diameter L4 (coincides with the diameterL4 of the bridging part 35) of the wire 3 and the diameter L2 of theperipheral surface 316 is 2 μm or less. More preferably, the differencebetween the diameter L4 (coincides with the diameter L4 of the bridgingpart 35) of the wire 3 and the diameter L2 of the peripheral surface 316is 4 to 8 μm, for example. Even more preferably, the difference betweenthe diameter L4 (coincides with the diameter L4 of the bridging part 35)of the wire 3 and the diameter L2 of the peripheral surface 316 is 5 to7 μm, for example.

In the present embodiment, in the case where the bridging part 35 has adiameter L4 from 27.5 μm or more to less than 32.5 μm, for example, thebent part 314C has a diameter L3 of 46 to 54 μm, for example. Thediameter L4 of the bridging part 35 and the diameter L3 of the bent part314C are not limited thereto, and may take values mentioned in relationto the electronic device A10.

Next, the operation and effects of the present embodiment will bedescribed.

In the present embodiment, the difference between the diameter L4 of thebridging part 35 and the diameter L2 of the peripheral surface 316 is 2to 8 μm. This is due to the hole inner surface 81 having a smalldiameter. In the case where the hole inner surface 81 has a smalldiameter, the area of the pressing part 82 of the capillary 8 as seenfrom the bottom surface can be enlarged. A larger area of the ball 319as seen in the thickness direction Z can thereby be pressed by thepressing part 82. As a result, the area of the bottom surface 311 thateffectively applies force to the bonding pad 131 can be enlarged.Therefore, the wires 3 can be firmly bonded to the bonding pads 131,while preventing the crack 139 from forming in the bonding pads 131.Accordingly, an improvement in the yield of the electronic device A11can be achieved.

Third Embodiment

A third embodiment of the present invention will be described usingFIGS. 23 and 24.

An electronic device A12 of the present embodiment differs from theabovementioned electronic device A10 in that a mixed metal 39 is mixedin the wires 3. A main component of the wires 3 is Cu or Ag, and, in thepresent embodiment, the main component of the wires 3 is Cu. The mixedmetal 39 is one of Pt, Pd and Au. A concentration of the mixed metal 39in the wires 3 is 0.5 to 5 wt %, for example.

In the present embodiment, the bonding pads 131 include a metal thinfilm layer 131M. The metal thin film layer 131M is made of CuAl₂, forexample. The metal thin film layer 131M contacts the wire 3. The metalthin film layer 131M has a thickness of 5 to 20 nm, for example.

Note that the features of the electronic device A12 may be combined withthe electronic device A11.

Next, the operation and effects of the present embodiment will bedescribed.

in the present embodiment, the mixed metal 39 is mixed in the wires 3.The mixed metal 39 is one of Pt, Pd and Au. According to such aconfiguration, the formation of a Cu₉Al₄ layer that contacts the bondingportion 31 on the bonding pads 131 can be suppressed. A Cu₉Al₄ layertends to react with the chlorine (Cl) in the sealing resin 7 andchemically change to alumina (Al₂O₃). Since alumina is an insulator, anelectrical connection between the bonding portions 31 and the bondingpads 131 will be difficult to establish if alumina is formed.Furthermore, alumina cracks easily, and there is also the possibility ofthe wires 3 detaching from the bonding pads 131. Therefore, according tothe present embodiment which can suppress the formation of a Cu₉Al₄layer on the bonding pads 131, the above problems caused by theformation of alumina can be avoided.

Furthermore, the operation and effects mentioned in relation to theelectronic device A10 are attained by the electronic device A12.

Fourth Embodiment

A fourth embodiment of the present invention will be described usingFIGS. 25 and 26.

An electronic device A13 of the present embodiment differs from theelectronic device A10 in that the bonding pads 131 include a Pd layer21. The Pd layer 21 directly contacts the wire 3, and, specifically, thewire 3 directly contacts a surface 211 of the Pd layer 21. In thepresent embodiment, an alloy of the material constituting the Pd layer21 and the material constituting the wire 3 is not formed between the Pdlayer 21 and the wire 3. The Pd layer 21 has a thickness of 0.1 to 1 μm,for example.

In the present embodiment, the bonding pads 131 include an Ni layer 22and a Cu layer 23.

The Pd layer 21 is located between the Ni layer 22 and the wire 3. TheNi layer 22 has a thickness of 1 to 5 μm, for example. The Ni layer 22is located between the Cu layer 23 and the Pd layer 21. The Cu layer 23has a thickness of 2 to 12 μm, for example.

In the present embodiment, the Pd layer 21, the Ni layer 22, and the Culayer 23 are formed on the Al layer 29 (a similar configuration to thebonding pads 131 of the electronic device A10).

The surface 211 of the Pd layer 21 is preferably smooth. The smoothnessof the surface 211 of the Pd layer 21 depends on the smoothness of asurface 221 of the Ni layer 22. Thus, the surface 221 of the Ni layer 22is preferably smooth. The smoothness of the surface 221 of the Ni layer22 is dependent on the smoothness of a surface 231 of the Cu layer 23.Therefore, the surface 231 of the Cu layer 23 is preferably smooth.

Preferably, a maximum height difference L5 of the surface 211 of the Pdlayer 21, a maximum height difference L6 of the surface 221 of the Nilayer 22, and a maximum height difference L7 of the surface 231 of theCu layer 23 are 40 nm or less. More preferably, the maximum heightdifference L5 of the surface 211 of the Pd layer 21, the maximum heightdifference L6 of the surface 221 of the Ni layer 22, and the maximumheight difference L7 of the surface 231 of the Cu layer 23 are 30 nm orless more. Even more preferably, the maximum height difference L5 of thesurface 211 of the Pd layer 21, the maximum height difference L6 of thesurface 221 of the Ni layer 22, and the maximum height difference L7 ofthe surface 231 of the Cu layer 23 are 20 nm or less, and morepreferably, the maximum height difference L5 of the surface 211 of thePd layer 21, the maximum height difference L6 of the surface 221 of theNi layer 22, and the maximum height difference L7 of the surface 231 ofthe Cu layer 23 are 10 nm or less. The maximum height differences L5, L6and L7 are the values measured on a line having a length of 80 μm, forexample.

Unlike the present embodiment, the bonding pads 131 need not include theCu layer 23. Also, the configuration of the present embodiment may becombined with the configuration of the electronic device A11 or theelectronic device A12. Note that the maximum height differences L5, L6and L7 may also be called surface morphologies.

The following results were obtained through tests conducted into therelationship between the maximum height difference L5 of the Pd layer 21and the viability of the join of the wire 3 to the Pd layer 21. In thecase where the maximum height difference L5 was 10 nm or less, the wire3 joined to the Pd layer 21 thirteen out of 13 times. On the other hand,in the case where the maximum height difference L5 was any of 51 nm, 55nm, 64 nm or 68 nm, it was not possible to join the wire 3 to the Pdlayer 21, and the wire 3 immediately detached from the Pd layer 21despite having been pressed against the Pd layer 21 by the capillary 8.Therefore, in joining the wire 3 to the Pd layer 21, a maximum heightdifference L5 of 40 nm or less is considered preferable, and a maximumheight difference L5 of 30 nm or less is considered more preferable, amaximum height difference L5 of 20 nm or less is considered even morepreferable, and a maximum height difference L5 of 10 nm or less isconsidered still more preferable.

The present invention is not limited to the abovementioned embodiments.Various design modifications can be made to the specific configurationsof the respective parts of the present invention.

1. An electronic device comprising: an electronic element; and a wirebonded to the electronic element, wherein the electronic elementincludes a bonding pad to which the wire is bonded, the bonding padincludes a Pd layer, and the Pd layer directly contacts the wire.
 2. Theelectronic device according to claim 1, wherein the wire directlycontacts a surface of the Pd layer.
 3. The electronic device accordingto claim 1, wherein the surface of the Pd layer has a maximum heightdifference of 40 nm or less.
 4. The electronic device according to claim1, wherein the surface of the Pd layer has a maximum height differenceof 30 nm or less.
 5. The electronic device according to claim 1, whereinthe surface of the Pd layer has a maximum height difference of 20 nm orless.
 6. The electronic device according to claim 1, wherein the surfaceof the Pd layer has a maximum height difference of 10 nm or less.
 7. Theelectronic device according to claim 1, wherein the Pd layer has athickness of 0.1 to 1 μm.
 8. The electronic device according to claim 1,wherein the bonding pad is further provided with a Ni layer, the Pdlayer is located between the wire and the Ni layer, and a surface of theNi layer contacts the Pd layer and has a maximum height difference of 40nm or less.
 9. The electronic device according to claim 8, wherein theNi layer has a thickness of 1 to 5 μm.
 10. The electronic deviceaccording to claim 8, wherein the bonding pad is further provided with aCu layer, the Ni layer is located between the Pd layer and the Cu layer,and the surface of the Cu layer contacts the Ni layer and has a maximumheight difference of 40 nm or less.
 11. The electronic device accordingto claim 10, wherein the Cu layer has a thickness of 2 to 12 μm.
 12. Theelectronic device according to claim 1, further comprising a sealingresin that seals the electronic element and the wire.
 13. The electronicdevice according to claim 12, wherein the electronic element includes asemiconductor substrate having a semiconductor element.
 14. Theelectronic device according to claim 13, wherein the semiconductorsubstrate is made of Si.
 15. The electronic device according to claim 1,wherein the wire is made of Cu, Au or Ag.
 16. The electronic deviceaccording to claim 1, wherein the electronic element includes aninsulating protective layer, and the protective layer exposes thebonding pad.
 17. The electronic device according to claim 16, whereinthe protective layer is formed with an opening, and the bonding pad isexposed through the opening.
 18. The electronic device according toclaim 16, wherein the protective layer has a passivation film, and thepassivation film is made of at least one of SiN and SiO₂.
 19. Theelectronic device according to claim 18, wherein the passivation filmhas a SiN layer and a SiO₂ layer that are laminated one on the other.